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Control of Accumulation of Cu(I) in Copper Sulfate Electroplating Plating Solution

机译:控制硫酸铜电镀电镀液中Cu(I)的累积

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Formation and accumulation of Cu(I) in copper sulfate electroplating solutions were discussed. By electrolysis, the accumulation of Cu(I) in the plating solutions was also confirmed in the laboratory. Accumulation rate and amount will depends on the current density and electrolysis time and the dissolved gases. Cu(I) is held in an aqueous solution as a complex with PEG, and gradually it is consumed by oxidation or disproportionation reaction. In the plating solutions using a nano bubble water, formation and accumulation rate of Cu(I) was different by gas species dissolved. Our results indicate the possibility for control of Cu(I) in the plating solutions.
机译:讨论了硫酸铜电镀溶液中Cu(I)的形成和积累。通过电解,在实验室中也证实了电镀溶液中Cu(I)的累积。累积率和量将取决于电流密度和电解时间和溶解气体。将Cu(I)保持在水溶液中作为与PEG的络合物,并逐渐通过氧化或歧化反应消耗。在使用纳米气泡水的电镀溶液中,Cu(I)的形成和累积率通过溶解的气体物种不同。我们的结果表明在电镀溶液中控制Cu(I)的可能性。

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