Photoluminescence Properties of ZnO Nanostructures Growth Vertically on Transparent and Conductive Al-doped ZnO Substrates

摘要

ZnO nanostructures were fabricated on transparent conductive Al-doped ZnO substrates by a novel multi-annealing process in which the reducing annealing and oxidization annealing were carried out in turn. As the result, the fabricated ZnO nanostructures were aligned vertically on the Al-doped ZnO film under the optimizing annealing parameters during both reduction and oxidization reactions. The photoluminescence properties of ZnO nanostructures were influenced significantly by the annealing processes. An intense blue-green emission while a suppressed UV emission was observed from obtained ZnO nanostructures, as well as the high transmittance over 65%. The growth mechanism of the ZnO nanostructures was revealed in detail.