Effect of Incident Light Direction and Metallic Reflector Layer on Light Sensing of Amorphous Silicon Pin Diodes

摘要

The performance of the amorphous silicon a-Si:H pin diode with respect to the wavelength, the incident direction, and the absorption of the light has been studied. Three types of LED lights, i.e., red, green, and blue, were used as the incident lights. The aluminum film was deposited above or below of the ITO electrode as the light reflector. The diode was exposed to the illumination light through the p~+ or n~+ layer. The external quantum efficiency was used as the reference to discuss the device performance.