The investigation of 2D materials such as graphene and transition metal dichalcogenides for beyond CMOS device concepts emphasizes the importance of surface and interfacial reactions. A fundamental understanding of such reactions in the context of materials integration for devices greatly benefits from in situ characterization methods where processes such as surface cleaning, film deposition, and annealing can be simulated and subsequently correlated to device behavior. This paper summarizes our recent work on in-situ characterization of 2D materials in the context of device applications and the correlation of the physical and electrical characterization.
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