RAMAN SCATTERING FROM VAPOR PHASE EPITAXIAL GROWTH OF SILICON CARBIDE ON POROUS 6H-SILICON CARBIDE

摘要

SiC vapor phase epitaxy (VPE) on porous silicon carbide (PSC) substrates formed by electrochemical anodization is reported. Raman scattering indicates that the polytype of the optically smooth epitaxy grown on PSC formed in a p-type 6H substrate is 6H, whereas that grown on PSC formed in an n-type 6H substrate is 3C. The formation of epitaxial 6H-SiC on porous 6H-SiC may open up new possibilities for dielectric device isolation, fabrication and epitaxial lift-off.