InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al_2O_3/Ga_2O_3(Gd_2O_3) as a gate dielectric

摘要

Ultra-high-vacuum deposited Al_2O_3/Ga_2O_3(Gd_2O_3) dual-layer gate dielectrics were used to fabricate metal-oxide-semiconductor capacitors (MOSCAPs) and MOS field-effect-transistors (MOSFETs). Excellent electrical properties of well-behaved C-V characteristics with very small frequency dispersions, a very low leakage current density of 2.5×10~(-9)A/cm~2 at Vg=Vfb+1V, and a low D_(it) of 2.5×10~(11)cm~(-2)eV~(-1) near the mid-gap, have been demonstrated in In_(0.2)Ga_(0.8)As MOSCAPs, which were RTA to 850°C. Moreover, 1μm-gate-length self-aligned inversion-channel In_(0.53)Ga_(0.47)As MOSFETs have achieved record-high maximum drain current of 1.05mA/μm and peak transconductance of 714μS/μm. Both device performances are the highest among all-types of enhancement mode MOSFETs, fabricated by self-aligned or non-self-aligned process. Various enhancement-mode MOSFETs in the configurations of inversion-channel and non-inversion-channel, fabricated with self-aligned and non-self-aligned processes are compared.