The authors have developed industrial technology to grow large single crystals of langasite having diameter of 86 mm and cylinder length of 100 mm. They were grown in the direction of the temperature compensated cuts (+48.5/spl deg/; +50/spl deg/; +54/spl deg/ to Y-axis) with Czochralski method. The present technology allows to make 3" (76.2 mm) langasite wafers. This diameter ensures the low losses of units by the wafer periphery in relation to the total number of units on the whole wafer surface. To grow langasite in direction of the temperature compensated cuts in contrast to Z-direction allows to make wafers by sawing ingots perpendicularly to the crystal axis.
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