首页> 外国专利> METHOD OF PRODUCING MIXTURE FOR GROWING OF SINGLE CRYSTALS OF LANTHANUM-GALLIUM SILICATE

METHOD OF PRODUCING MIXTURE FOR GROWING OF SINGLE CRYSTALS OF LANTHANUM-GALLIUM SILICATE

机译:硅酸镧镓镓单晶生长的制备方法

摘要

FIELD: chemical technology of composite materials based on oxides for growing of single crystals, in particular, of lanthanum-gallium silicate. SUBSTANCE: for producing single crystals of lanthanum-gallium silicate of stoichiometric composition added to mixture of oxides of lanthanum, gallium and silicon is metallic gallium in the preset range of concentration. Then mixture is heated in oxygen-containing medium locally and short and of short duration up to starting of reaction of self-propagating high-temperature synthesis in conditions of combustion. EFFECT: higher efficiency. 3 cl, 1 tbl
机译:领域:基于氧化物的复合材料的化学技术,用于生长单晶,特别是硅酸镧镓硅。物质:为生产化学计量组成的镧-硅酸镧镓单晶体,添加到镧,镓和硅的氧化物混合物中的是预定浓度范围内的金属镓。然后,将混合物在含氧介质中局部且短时间地加热,直至在燃烧条件下开始自蔓延高温合成反应的开始。效果:更高的效率。 3厘升,1汤匙

著录项

  • 公开/公告号RU2126063C1

    专利类型

  • 公开/公告日1999-02-10

    原文格式PDF

  • 申请/专利权人 RAFIDA DEVELOPMENTS INKORPOREJTED (GB);

    申请/专利号RU19960118840

  • 发明设计人 KOZNOV G.G.;

    申请日1996-09-23

  • 分类号C30B29/34;C30B15/00;

  • 国家 RU

  • 入库时间 2022-08-22 02:13:49

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