Ion irradiation induced crosslinking effects on mechancal properties of photoresist films

摘要

We investigate the crosslinking process in ion irradiated AZ 1350J~(TM) photoresist. The films were deposited on clean silicon wafers and irradiatedwith 380 keV He ions in the fluence range of 10~(13) to 10~(16) He.cm~(-2), corresponding to average deposited energy densities from 0.02 to 20 eV.A~(-3) respectively. Nanoindentation, Raman spectroscopy as well as gel content and density measurements have been used to determine mechanical and structural properties of the irradiated films. The results show that the irradiation induces crosslinking of the polymeric chains but also produces carbonization of the films. For deposited energy densities up to 2 eV. A~(-3), the crosslinking process is predominant and is mainly responsible for the increase of hardness and Young's modulus by respectively 5 and 2 times in relation to the values of the pristine film and for the gel content of 90