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Chemical Aging, Charge Transport, and Electroluminescence in Alq_3-based Organic Light-Emitting Diodes

机译:基于ALQ_3的有机发光二极管的化学老化,电荷输送和电致发光

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Conduction in aluminum (III) 8-hydroxyquinoline (Alq_3) was modeled based on trap-charge limited conduction of electrons in the bulk. The evolution of a narrow Gaussian distribution of localized trap states below the lowest unoccupied molecular orbital (LUMO) of Alq_3, lying against a natural exponential background, was used to explain changes in the current-voltage characteristic and external quantum efficiency with time observed by many researchers for organic light-emitting diodes. Based on the change of the shape of the J-V curve, the depth of the electron trap states that were formed during aging was about 0.25 eV below the LUMO of Alq_3. An increase in drive voltage and decrease in efficiency is predicted with aging by this model for current densities in a reasonable range, assuming that the evolved trap states are non-emissive and also non-quenching. The products of chemical aging can account for the generation of traps at the observed depth.
机译:铝(III)8-羟基喹啉(ALQ_3)的传导是基于散装电荷有限的电子中电子中电子的引导。局部陷阱状态下方的狭窄高斯分布的演变在符合自然指数背景下的最低未占用的分子轨道(LUMO),用于解释许多人观察到的电流 - 电压特性和外部量子效率的变化有机发光二极管的研究人员。基于J-V曲线形状的变化,在老化期间形成的电子捕集状态的深度约为Alq_3的LumO下方0.25eV。通过这种模型在合理范围内的电流密度的这种模型预测驱动电压和效率降低的增加,假设演进的陷阱状态是非发光的并且也不淬火。化学老化的产品可以考虑在观察到的深度处产生陷阱。

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