首页> 外文会议>ISamp;T's NIP16: International Conference on Digital Printing Technologies October 15-20, 2000 The Westin Bayshore Hotel Vancouver, B.C., Canada >Chemical Aging, Charge Transport, and Electroluminescence in Alq_3-based Organic Light-Emitting Diodes
【24h】

Chemical Aging, Charge Transport, and Electroluminescence in Alq_3-based Organic Light-Emitting Diodes

机译:Alq_3基有机发光二极管中的化学老化,电荷传输和电致发光

获取原文
获取原文并翻译 | 示例

摘要

Conduction in aluminum (III) 8-hydroxyquinoline (Alq_3) was modeled based on trap-charge limited conduction of electrons in the bulk. The evolution of a narrow Gaussian distribution of localized trap states below the lowest unoccupied molecular orbital (LUMO) of Alq_3, lying against a natural exponential background, was used to explain changes in the current-voltage characteristic and external quantum efficiency with time observed by many researchers for organic light-emitting diodes. Based on the change of the shape of the J-V curve, the depth of the electron trap states that were formed during aging was about 0.25 eV below the LUMO of Alq_3. An increase in drive voltage and decrease in efficiency is predicted with aging by this model for current densities in a reasonable range, assuming that the evolved trap states are non-emissive and also non-quenching. The products of chemical aging can account for the generation of traps at the observed depth.
机译:铝(III)8-羟基喹啉(Alq_3)中的电导是基于主体中电子的陷阱电荷受限电导来建模的。在自然指数背景下,Alq_3的最低未占据分子轨道(LUMO)下方的局部陷阱态的窄高斯分布的演化被用来解释许多人观察到的电流-电压特性和外部量子效率随时间的变化研究人员为有机发光二极管。根据J-V曲线形状的变化,在时效过程中形成的电子陷阱态的深度比Alq_3的LUMO低约0.25 eV。该模型针对合理范围内的电流密度,通过老化预测了驱动电压的增加和效率的降低,假设演化的陷阱状态既非发射性又非猝灭状态。化学老化的产物可以解释在观察深度处陷阱的产生。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号