首页> 外文会议>The Meeting of the Electrochemical Society >A First Approach to the Interface Analysis of Chemical Bath Deposited In(OH,O)_xS_y Buffer Layers and CuInS_2 in Thin Film Solar Cells
【24h】

A First Approach to the Interface Analysis of Chemical Bath Deposited In(OH,O)_xS_y Buffer Layers and CuInS_2 in Thin Film Solar Cells

机译:薄膜太阳能电池中沉积在(OH,O)_XS_Y缓冲层和CUINS_2中沉积的化学浴界面分析的第一方法

获取原文

摘要

Chemical bath deposition (CBD) of In(OH,O)_xS_y is a subject of ongoing research-mainly due to the objective of developing Cd-free,chalcopyrite based thin film solar cell devices [1,2].The solution chemistry,the deposition mechanism and the characteristics of CBD-In(OH,O)_xS_y thin films have been investigated to a large extend [3,4,5].The interplay between chemical bath,i.e.deposition conditions,and the performance of resulting solar cells has,however,largely remained unclear.Here we present first results concerning the analysis of the In(OH,O)_xS_y/CuInS_2 interface and its sensitivity to changes in the chemical environment during the deposition process.Solar cell performances of the investigated devices are also reported.
机译:化学浴沉积(CBD)(OH,O)_XS_Y是正在进行的研究的主题 - 主要是由于开发无铬铜矿的薄膜太阳能电池装置的目的[1,2]。溶液化学,已经研究了沉积机理和CBD-In(OH,O)_XS_Y薄膜的特性[3,4,5]。化学浴,IEDEposition条件之间的相互作用,以及所产生的太阳能电池的性能然而,在很大程度上仍然不清楚。我们介绍了关于在沉积过程中对(OH,O)_XS_Y / CUINS_2界面分析的第一个结果及其对化学环境中的变化的敏感性。调查装置的散细胞性能也是如此报道。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号