Very thin (< 10nm) silicon oxynitride (SiO_xN_y) layers formed by PECVD

摘要

In this work,results of PECVD process optimisation aiming in repeatable fonnation of oxynitride layers below 10 nm,while still providing electro-physical properties,which (in the near future) would allow their application for CMOS ICs production,are presented.Properties of the oxynitride layers were determined by: spectroscopic ellipsometry,XPS and electrical characterisation methods.