Microwave Reflectance Studies of Photoelectrochemical Kinetics at Semiconductor Electrodes.Steady State,Transient and Periodic Responses

摘要

Light and voltage induced changes in the microwave reflectivity of semiconductors can be used to study the kinetics of electron transfer at semiconductor|electrolyte interfaces.The method,which was pioneered by Tributsch and co-workers',is based on detection of photogenerated minority carriers 'queuing' at the interface.The theory of the method has been developed and illustrated by numerical calculations of the steady state microwave response for low-doped silicon.The results define the range of rate constants that should be experimentally accessible.The time and frequency responses of light induced microwave reflectivity changes are considered,and it is shown that they can be used to derive values of electron transfer and recombination rate constants.