ELECTRICAL CHARACTERIZATION OF THIN OXIDE LAYERS BY IMPEDANCE SPECTROSCOPY USING SILICON/OXIDE/ELECTROLYTE (SOE) STRUCTURES.

摘要

As a consequence of technology scaling,advanced gate dielectric coatings,a few atomic layers in thickness,are required in the new chip generation.Capacitance/voltage (C/V) characteristics is a fundamental property of the MOS devices.A precise measurement of the device capacitance is a determining step for the oxide thickness setting and channel length determination.It is recognized that capacitance measurements become difficult because of the high tunneling leakage current.