Growth of the InN pillar crystal films by means of atmospheric pressure halide chemical vapor deposition

摘要

InN has been expected as red light emitting diodes because it has an energy gap of 1.89 eV at 300 K.In this study,we report the results of an investigation into the growth of hexagonal InN on a Si(100) substrate by means of atmospheric pressure halide chemical vapor deposition (AP-HCVD) with varying NH_3:InCl_3 ratios.