Metal Deposition onto a Porous Silicon Layer by Immersion Plating from Aqueous and Nonaqueous Solutions

摘要

It is important to create a good contact between porous silicon(PS)and metal to realise the potential applications in the microelectronics industry.Wet processes such as electrodeposition,electroless plating and immersion plating(1,2)are expected to be quite effective to deposit various metals.Of these techniques,the immersion-plating method is highly nominated because it has the virtue of simplicity and lower costs.Moreover,it is desirable for some applications to deposit metal on the substrate without the need for an electrical contact.This study reports on the immersion plating of metals(Ag,Cu,Ni)onto a PS layer from aqueous and nonaqueous solutions,with the aim to compare and realise the different deposition behavior of each metal and to investigate the effect of residual water in nonaqueous solutions on the anodic reaction of the process.