Mechanisms and Applications of the Control of Dopant Profiles in Silicon Using Si_(1 centre dot x centre dot y)Ge_xC_y Layers Grown by RTCVD

摘要

Despite the reduced thermal budgets in modern ULSI processes,there are still many examples where the diffusion of common dopants adversely affects device performance.These especially include the cases of boron and phosphorus profiles,since the diffusion of these dopants is mediated by silicon interstitial atoms.Many process steps inject silicon interstitial atoms,which can lead to diffusion coefficients over an order of magnitude higher than those otherwise expected.