Surface Adsorption and Reaction of Chlorine on Impurity Doped Si Using an ECR Plasma

摘要

Dry etching process is very important for ultralarge scale integrated circuit(ULSI)fabrication.In the dry etching of silicon with halogen-based gases,it is well known that the etch rate of n-type silicon increases,while that of p-type silicon decreases with increasing dopant concentration(1).However,although these reasons have been investigated(1)(2),little is known about them from the point of view of surface adsorption and reaction of reactant gases or etching products.