High-rate deposition of microcrystalline silicon using resonance plasma source (helix)-plasma properties and deposition results

摘要

Microcrystalline silicon layers have been deposited by PECVD using a resonance plasma source (Helix) operating at frequencies of 46,68,113 and 163 MHz. The plasma discharges in hydrogen and various hydrogen/silane mixtures were investigated by optical emission spectroscopy (OES) and mass spectroscopy (MS). Growth rate, crystalline fraction and hydrogen content of the layers were studied for different gas compositions, excitation frequencies and plasma powers.