Pulsed plasma deposition for forming a microcrystalline silicon layer for solar applications

摘要

A method for an intrinsic microcrystalline silicon layer is provided. In one embodiment, the microcrystalline silicon layer is produced by introducing a substrate into a process chamber, feeding a gas mixture into the process chamber, applying an RF power in a first operating mode to the gas mixture, pulsing the gas mixture into the process chamber and applying the RF power in one second mode of operation on the pulsed gas mixture.