Dislocation Networks in Single Crystal MoSi_2 Deformed at High Temperatures

摘要

The dislocation structures for MoSi_2 single crystals deformed along [322] at 1550 °C with a strain rate of 5 * 10~(-5) s~(-1) has been characterized using TEM. A variety of different dislocation arrays and networks has been observed with very few isolated dislocations. The networks consist of segments with Burgers vectors parallel to <100>, <110> and <111>. It is shown that these networks are consistent with the interaction of dislocations with Burgers vectors b = 1/2<111> on different glide planes, which subsequently climb in a process akin to dynamic recovery.