We report the results of comparison of radiation-induced defects (1 MeV electrons) in n~+-p-p~+ Si diodes doped with gallium or boron ranging in concentration from 8X10~(14) to 5X10~(16) cm~(-3), together with the impact of oxygen on radiation-induced defects. Present results provide evidence for new defects states in addition to those previously reported in gallium-and boron-doped Si. The combined boron and gallium data provide enough information to gain valuable insight into the role of the dopants on radiation-induced defects in Si. The interesting new future of our results is that the gallium appear to strongly suppress the radiation induced defect, especially hole level E_v+0.36 eV, which is thought to act as a recombination center. Similarly the dominant electron level at E_c-0.18 eV in B-doped Si (which act as a donor) has not been observed in Ga-doped CZ-grown Si.
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