Synthesis of III-N_x-V_(1-x) Thin Films by N Ion Implantation

摘要

Dilute III-N_x-V_(1-x) alloys were successfully synthesized by nitrogen implantation in GaAs and InP. The fundamental band gap energy for the ion beam synthesized III-N_x-V_(1-x) alloys was found to decrease with increasing N implantation dose in a manner similar to that commonly observed in epitaxially grown GaN_xAs_(1-x) and InN_xP_(1-x) thin films. The fraction of N occupying anion sites ("active" N) in the GaN_xAs_(1-x) layers formed by N implantation was thermally unstable and decreased with increasing annealing temperature. In contrast, thermally stable InN_xP_(1-x) alloys with N mole fraction as high as 0.012 were synthesized by N implantation in InP. Moreover, the N activation efficiency in InP was at least a factor of two higher than in GaAs under similar processing conditions. The low N activation efficiency (<20%) in GaAs can be improved by co-implanting Ga and N in GaAs.