Growth and physical properties of in situ phosphorus-doped RTLPCVD polycrystalline silicon thin films

机译：原位磷掺杂RTLPCVD多晶硅薄膜的生长和物理性质

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In situ phosphorus-doped (P-doped) polysilicon (poly-Si) thin films are obtained by rapid thermal low pressure chemical vapor deposition (RTLPCVD) in a single chamber RTP machine by using diluted silane (SiH_4/Ar=10

机译：通过使用稀释的硅烷通过单室RTP机中的快速热低压化学气相沉积（RTLPCVD）获得原位磷掺杂（P掺杂）多晶硅（Poly-Si）薄膜（SiH_4 / Ar = 10

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《Symposim on rapid thermal processing of the E-MRS conference》|1999年||共4页
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1. MECHANISM OF GRAIN GROWTH IN PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON THIN FILMS DURING ANNEALING [J] . F JESU RETHINAM Indian Journal of Physics and Proceedings of the Indian Association for the Cultivation of Science . 1999,第3期

机译：退火过程中掺磷的多晶硅薄膜的晶粒长大机理
2. Mechanism of grain growth in phosphorus-doped polycrystalline silicon thin films during annealing [J] . F Jesu Rethiam, S Kalainathan, R Sivarama Krishnan Indian Journal of Physics and Proceedings of the Indian Association for the Cultivation of Science . 1999,第3期

机译：掺磷多晶硅薄膜退火过程中晶粒长大的机理
3. Structural and mechanical characterization of in-situ phosphorus-doped rapid thermal low pressure chemical vapor deposition polycrystalline silicon films [J] . S. Kallel, B. Semmache, M. Lemiti Microelectronics Journal . 1999,第7期

机译：原位掺磷快速热低压化学气相沉积多晶硅膜的结构和力学性能
4. Growth and physical properties of in situ phosphorus-doped RTLPCVD polycrystalline silicon thin films [C] . Symposim on rapid thermal processing of the E-MRS conference . 1999

机译：原位磷掺杂RTLPCVD多晶硅薄膜的生长和物理性质
5. Metal silicide nanowires for nanoscale contacts and polycrystalline silicon thin films for solar cells by metal-induced growth. [D] . Kim, Joondong. 2006

机译：通过金属诱导生长，用于纳米级触点的金属硅化物纳米线和用于太阳能电池的多晶硅薄膜。
6. Idiosyncrasies of Physical Vapor Deposition Processesfrom Various Knudsen Cells for Quinacridone Thin Film Growth on SiliconDioxide [O] . Boris Scherwitzl, Christian Röthel, AndrewO. F. Jones, -1

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8. Physical Models of Thin Film Polycrystalline Solar Cells Based on Measured Grain-Boundary and Electronic-Parameter Properties. Final Report, September 18, 1978-December 31, 1979 [R] . Lindholm, F. A., Fossum, J. G., Holloway, P. A., 1979

机译：基于测量晶界和电子参数特性的薄膜多晶太阳能电池物理模型。最终报告，1978年9月18日至1979年12月31日

Growth and physical properties of in situ phosphorus-doped RTLPCVD polycrystalline silicon thin films

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