Tuning of Hidden Order and Superconductivity in URu_2Si_2 by Applied Pressure and Re Substitution

摘要

Single crystals of URu_(2-x)Re_xSi_2 have been grown via the Czochralski technique. Detailed electrical transport studies under pressure on single crystals of URu_2Si_2 confirm that the zero-temperature critical field is suppressed smoothly towards an extrapolated critical pressure of 15 kbar, which also corresponds to the accepted critical pressure of the hidden order phase. Improving on previous work on polycrystalline samples, studies of single crystals of URu_(2-x)Re_xSi_2 have provided more precise tracking of the suppression of both the hidden order phase at low doping and the ferromagnetic phase at intermediate Re concentrations.