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Effect of Surface Treatments in Nanocrystalline Silicon

机译:表面处理在纳米晶体中的影响

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Exposure to ammonia (NH_3) increase the dark current (DC) in porous silicon (PS),but evaporated selenium (Se) deposited on PS decreases DC.Photoluminescence (PL) measurement shows that there are two types of centers.PL in one region of PS (Peak approx 800nm) initially increases with the NH_3 exposure and then decreases.But the PL from another region of PS has a peak at approx 780nm and it decreases continuously with the NH_3 exposure.Dipping PS in water and drying in air shifts the PL peak at 800 nm to 744 nm.Atomic force Microscopy (AFM) shows that the as prepared sample has views of diameters 2.4 nm,3.4nm,4.6nm and bigger.However,in the AFM images of the water treated sample the wires of diameter 3.4nm and 4.6nm are absent.The PL results are explained using the AFM data and the John-Singh model of quantum confinement.
机译:暴露于氨(NH_3)增加多孔硅(PS)中的暗电流(DC),但沉积在PS上的蒸发硒(SE)降低DC.photol发光(PL)测量表明,在一个区域中有两种类型的中心.PL PS(峰值大约800nm)最初用NH_3曝光增加,然后减少。从PS的另一个区域中,PL在约780nm的另一个区域中具有峰值,并且在水中连续降低水并在空气中致干燥。 PL峰值在800nm至744 nm.atomic力显微镜(AFM)表明,AS制备的样品具有直径2.4nm,3.4nm,4.6nm和更大的视图。然而,在AFM图像的水处理样品中的电线不存在直径3.4nm和4.6nm。使用AFM数据和量子禁闭的John-Singh模型来解释PL结果。

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