Electron stimulated desorption of deuterium from GaN(0001) surface

摘要

Temperature programmed desorption (TPD) was performed on deuterated GaN(0001) surfaces which had been exposed to various doses of 90-eV electrons.TPD of the deuterated surface without electron exposure shows a broad D_2 desorption feature with a peak desorption temperature at approx400 degC.Electron exposure results in a decrease in intensity of the desorption peak whichis attributed to removal of surface deuterium by electron stimulated desorption (ESD).This removal of deuterium by ESD produces no change in the peak desorption temperature indicating that recombiantive desorption is first order in deuterium coverage.