Native Point Defect Interactions in ZGP Crystals under Influence of e-Beam Irradiation.

摘要

Optical absorption in the defect-related region of highly efficient non-linear ZnGeP_2 crystals under e-beam irradiation and post-irradiation anneals has been investigated. Partially irreversible changes of the absorption were found in the spectral range 0.9-2.5 mum (0.5-1.3 eV) after irradiation and subsequent low-temperature anneals.Data obtained do not support the vacancy model for ZnGeP_2 absorption in the 0.5-1.3 eV range.