High performance organic field effect transistor with a novel top-and-bottom contact (TBC) structure

摘要

We studied the features of the newly developed Top and Bottom Contact Field Effect Transistor (TBCFET) with organic semiconductor layers.TBCFETs with ca.0.5mum channel length (L) were fabricated and their transistor properties were measured.The output drain-source currents (I_(DS)) of TBCFET were 1 to 2 odrs of magnitude higher than those of ordinary planar type FETs with 100mu7m channel length.On the other hand,because of the TCB structure,off current tends to become larger in the TBCFET.Therefore,in order to solve this off-current problem,we intentionally ofrmed the Schottky junction at the top electrode/semiconductor interface.As a result,the off current became about 2 orders of magnitude smaller than before the formation of the Schottky junction.