Single crystalline In_2O_3 nanowires were successful synthesized using a laser ablation method. Extensive material characterization such as X-ray diffraction (XRD) and selected area electron diffraction (SAED) revealed a cubic crystal structure for these nanowires with [110] as the growth direction. Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) are used to determine the diameter and length of our nanowires. By using monodispersed gold clusters as the catalyst, these nanowires can be grown with well-defined diameters around 10 nm. Individual In_2O_3 nanowires have been utilized to construct field effect transistors, which confirmed In_2O_3 nanowires as n-type semiconductors and exhibited on/ off ratios as high as 10~4 at room temperature. The temperature-dependence of the conductance revealed thermal emission as the dominating transport mechanism. Our work can lead to important applications such as chemical sensing for In_2O_3 nanowires.
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