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TRANSPORT ANISOTROPY IN PLD-MADE La_(0.75)Sr_(0.25)MnO3 FILMS

机译:在PLD制造的LA_(0.75)SR_(0.25)MNO3薄膜中运输各向异性

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A sequence of epitaxial La_(0.75)Sr_(0.25)MnO3 (LSMO) films with thickness ranging from 2400 to 50 A have been prepared by pulsed laser deposition onto (110) SrTiO3 (STO) substrates. Com-pared with our previous results on LSMO/STO(100) films, films on STO(110) substrates exhibit strong anisotropy of electrical resistivity rho. rho measured in [110] direction is comparable with the resistivity of LSMO/STO(100) films while rho in [001] direction is 25 times higher than in STO(100) case. The maximum value of anisotropy parameter rho_([001]) / rho_([110]) = 25 is reached for thick films at the low temperature of 90 K. Distinct crossover from 3D to 2D case has been ob-served. For thick films anisotropy monotonously decreases with the temperature increase. Films thinner than 200 A exhibit a maximum of anisotropy parameter, which shifts to lower tempera-tures with the thickness decrease. The maximum temperature coefficient of resistivity (TCR) was found to be around 2% if measured along [001] direction and about 50 % higher in [110] in-plane direction. We explain the observed effects in terms of the crystalline properties of fabri-cated films.
机译:通过脉冲激光沉积在(110)SRTIO3(STO)基板上,制备了一系列外延LA_(0.75)SR_(0.25)MNO3(LSMO)膜的厚度范围为2400至50a。在LSMO / STO(100)薄膜上的先前结果,STO(110)基板上的薄膜呈现,表现出强大的电阻率ROO各向异性。在[110]方向上测量的RHO与LSMO / STO(100)膜的电阻率相当,而在[001]方向上的rHO方向比STO(100)壳体高25倍。各向异性参数Rho _([001])/ rho _([110])= 25的最大值用于在90k的低温下达到厚膜。已经ob服务于3D到2D壳体的不同的交叉。对于厚膜,各向异性单调随温度升高而单调。薄膜比200a更薄,最大的各向异性参数,其转移到厚度降低的较低的温度下降。如果沿[001]方向测量,则发现最大电阻率(TCR)的电阻率(TCR)约为2%,在接口平面方向上高出约50%。我们在诱导薄膜的结晶性能方面解释了观察到的效果。

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