The influence of mechanical constraint imposed by device geometry upon the switching response of a ferroelectric thin film memory capacitor is investigated. The memory capacitor was represented by two-dimensional ferroelectric islands of different aspect ratio, mechanically constrained by surrounding materials. Its ferroelectric non-linear behaviour was modeled by a crystal plasticity constitutive law and calculated using the finite element method. The switching response of the device, in terms of remnant charge storage, was determined as a function of geometry and constraint. The switching response under applied in-plane tensile stress and hydrostatic pressure was also studied experimentally. Our results showed that (1) the capacitor's aspect ratio could significantly affect the clamping behaviour and thus the remnant polarization, (2) it was possible to maximise the switching charge through the optimisation of the device geometry, and (3) it is possible to find a critical switching stress at zero electric field and a critical coercive field at zero residual stress.
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