Deposition of Fluorinated Amorphous Carbon Thin Films with Low Dielectric Constant and Thermal Stability

摘要

Fluorinated amorphous carbon (a-C:F) thin films were deposited by inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD) with increasing CF_4:CH_4 gas flow rate ratio, and then annealed with increasing annealing temperature (100, 200, 300, and 400°C). We have found the reduction mechanism of the dielectric constant and the thermally stable condition for the a--C:F films. On the basis of the results, the optimal condition to satisfy both the low dielectric constant and the thermal stability is followed as ; the a-C:F films have to have the compatible F content to make a compromise between the two properties ; the C-F_x bonding configuration has to exist as a form of C-F_2 & C-F_3 instead of C-F ; The films should be somewhat cross-linked structure.