Pendeo-epitaxial growth of gan on SiC and silicon substrates via metalorganic chemical vapor deposition

摘要

Pendeo-epitaxial lateral growth (PE) of GaN epilayers on (0001) 6H-silicon carbide and (111) Si substrates has been achieved. Growth on the latter substrate was accomplished through the use of a 3C-SiC transition layer. The coalesced PE GaN epilayers were characterized using scanning electron diffraction, x-ray diffraction and photoluminescence spectroscopy. The regions of lateral growth exhibited ～0.2° crystallographic tilt relative to the seed layer. The GaN seed and PE epilayers grown on the 3C-SiC/Si substrates exhibited comparable optical characteristics to the GaN seed and PE grown on 6H-SiC substrates. The near band-edge emission of the GaN/3C-SiC/Si seed was 3.450 eV (FWHM～19 meV) and the GaN/6H-SiC seed was 3.466 eV (FWHM～4 meV).