A new highly sensitive photoreceptor in visible-spectrum region with high contrast voltage ratio has been developed for an electrophotographic device. The multilayered amorphous silicon photoreceptor has been prepared with PE-LPCVD and sputtering system. The structure of the photoreceptor consists of four part: (a) Al substrate, (b) a-WO$-3$/ blocking layer, (c) a-Si:H(i) photogeneration and transport layer, (d) a-C:H surface protecting layer. In this study, the photoreceptor is exposed with different wavelength and illumination. Keithley 236 Semiconductor Parameter Analyzer is used to measure the current-voltage curves of photoreceptor. In addition, Electrostatic Parameter Analyzer is used to measure the photo-induced discharge curves, which is used to simulate the processes of copying machines. According to the I-V curves and PID curves, we can investigate the transport of photocarrier in photoreceptor and the optoelectronic parameters.
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