Study on the optoelectronic properties of amorphous selenium-based xerographic photoreceptors for electrophotography

摘要

Amorphous selenium-based material could be used as the photoreceptor of a photocopy machine. For much more understanding of amorphous selenium (a-Se) photoreceptor, the aluminum oxide (Al_2O_3) and amorphous tungsten trioxide (a-WO_3) were deposited onto polished aluminum substrates as the blocking layers using the thermal oxidation and vacuum sputtering systems, respectively. Next, we used a vacuum evaporation method for preparing the amorphous selenium film in order to complete the Al/Al_2O_3/a-Se and Al/a-WO_3/a-Se photoreceptors. The optoelectronic properties of the samples were measured and compared. We produced photoinduced discharge curves (PIDC) using electrostatic paper analyzer, and the initial surface potential (V_(so)), dark decay time (t_d), photo-sensitivity (E_(1/2)) and residual potential (V_r) could be obtained. We can find that Al/a-WO_3/a-Se photoreceptor has excellent optoelectronic properties. Furthermore, we also compared different blocking layers and isothermal annealing effects for the photoreceptors.