Reactive pulsed laser ablation and deposition of thin indium tin oxide films for solid state compact sensors

摘要

The indium tin oxide (ITO) films have been deposited on Si (100) substrates by laser ablating pure metals in oxygen atmosphere. The ablation has been carried out by a frequency doubled Nd:YAG laser and the oxygen pressure has been varied between 50 and 500 Pa. The substrate temperature has been varied from 25 to 700°C. The gaseous phase has been studied by mass spectrometry and fast ICCD imaging. The deposited films have been analysed by X-ray diffraction, scanning electron microscopy and electric resistance measurements.