首页> 外文会议>Symposium C on growth, characterisation and applications of bulk II-VIs of the E-MRS 1998 spring conference >Can percolation control doping, diffusion and phase segregation in (Hg, Cd)Te?
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Can percolation control doping, diffusion and phase segregation in (Hg, Cd)Te?

机译:可以渗透控制掺杂,扩散和相偏析(Hg,Cd)Te?

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We show that percolation can control not only diffusion in solids, but in the case of semiconductors also their electrical activity, via the doping action of the diffusing species. This occurs in (Hg_1-xCd_x) when x_CD < 0.8. The 10~7 times higher diffusivity at x_CD < 0.8 can be understood by realizing that the percolation threshold for an ideal FCC lattice is at 0.19. While normally Ag is a donor, it can be an acceptor by stabilizing the Hg(I) state. This is possible by interaction with 2 Hg neighbors, a process that will be favorable above the Hg percolation limit. The fast Ag diffusion also holds the clue for the occurrence of ultra-low concentration phase separation in this system, the result of a balance between elastic attraction and Coulombic repulsion between the charged dopants. Prima facie evidence for this phase separation comes from coulometric Ag titration in and out of MCT. direct c 1999 Elsevier Science B.V. All rights reserved.
机译:我们表明渗透不仅可以控制固体的扩散,而且在半导体的情况下,通过掺杂物种的掺杂作用也是它们的电活动。当x_cd <0.8时,这发生在(hg_1-xcd_x)中。通过意识到理想的FCC晶格的渗透阈值为0.19,可以理解X_CD <0.8较高的扩散率高的10〜7倍。虽然通常Ag是捐赠者,但它可以是通过稳定HG(i)状态的受体。通过与2个HG邻居的交互,这是可能的,这是一个将有利的过程高于HG渗透限制。快速Ag扩散也保持该系统中的超低浓度相分离的线索,其在带电掺杂剂之间的弹性吸引力和库仑排斥之间的平衡结果。此相分离的Prima面部证据来自Coulometric Ag滴定进出MCT。直接C 1999 Elsevier Science B.v.保留所有权利。

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