Large Rashba spin-orbit splitting in gate controlled n-type modulation doped HgTe/Hg0.3Cd0.7-xMnxTe quantum wells

摘要

We report on Rashba spin-orbit splitting in a series of gated n-type HgTe/Hg0.3Cd0.7-xMnxTe quantum wells with an inverted band structure. By analyzing the gate-voltage-dependent beating pattern observed in the Shubnikov-de Haas oscillations, we determine the gate voltage dependence of the spin-orbit coupling parameter beta, which can be tuned by a factor of about 5 in the narrow spacer sample, Our experimental data and its analysis show that the Hg0.3Cd0.7-xMnxTe layer strongly enhances the spin-orbit splitting. when close enough to the two-dimensional electron gas. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 21]