Crystallization control of the amorphous buffer layer in hydrogenated nanocrystalline silicon

摘要

Hydrogenated nanocrystalline silicon film have been deposited by RF sputtering in a pure hydrogen plasma at a substrate temperature of 150 °C. The unintentionally grown amorphous buffer layer was almost completely crystallized at an annealing temperature as low as 150 °C. By combining infrared absorption measurements and electron microscopy observations, the critical role of dihydride species, Si-H_2, in the crystallization process have been clearly evidenced and discussed.