The modeling and analysis of shunt type custom power device

摘要

In the field of custom power device application, the modeling of the power converter is very difficult and important. The shunt (parallel) type custom power devices are based on the high frequency carrier voltage source converter. In this paper, the authors propose two measuring methods of AC side modeling by the dead time voltage and the semiconductor device loss. One is the open loop. Another is the closed-loop test. From these, one can match the values of mathematical experimental values. The results of 2 kVA and 43 kW experiments/simulations show that the AC side resistance of the theoretical and experimental results agree well. The authors propose the D-Q circuit model based new ellipses and a circle of the operation. The ellipse of the reactance and the AC side voltage curves are newly offered which origins are depended on the AC side equivalent resistance.