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Exciton-Phonon interaction in semiconductors with intermediate polar coupling

机译：具有中间极性耦合的ARCITON-Phonon在半导体中的相互作用

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The influence of excitonic effects on dephasing and relaxation processes in semiconductors with intermediate polar coupling is studied. Additional resonances in the optical spectra and strongly enhanced dephasing near the band-edge are discussed.

机译：研究了激发效应对具有中间极性耦合的半导体中的去除和弛豫过程的影响。讨论了光谱中的附加共振，并讨论了带边缘附近的强大增强的脱离。

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《Quantum Electronics and Laser Science Conference 》|2003年||共3页
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P. Gartner; F. Jahnke; W. Schafer; TOPS;
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中图分类 TN201-53;
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专利

1. Exciton-phonon interaction in semiconductors with intermediate polar coupling [J] . Schafer W., Gartner P., Jahnke F. Physica status solidi, B. Basic research . 2003 ,第3期

机译：具有中间极性耦合的半导体中的激子-声子相互作用
2. Probing the exciton-phonon coupling strengths of O-polar and Zn-polar ZnO wafer using hard X-ray excited optical luminescence [J] . Bi-Hsuan Lin, Huang-Yeh Chen, Shao-Chin Tseng, Applied Physics Letters . 2016 ,第19期

机译：用硬X射线激发的光致发光探测O极性和Zn极性ZnO晶片的激子-声子耦合强度
3. State-Resolved Exciton-Phonon Couplings in CdSe Semiconductor Quantum Dots [J] . D.M.Sagar, Ryan R.Cooney, Samuel L.Sewall The journal of physical chemistry, C. Nanomaterials and interfaces . 2008 ,第25期

机译：CdSe半导体量子点中的状态分辨激子-声子耦合
4. Exciton-Phonon interaction in semiconductors with intermediate polar coupling [C] . P. Gartner, F. Jahnke, W. Schafer, Quantum Electronics and Laser Science Conference . 2003

机译：具有中间极性耦合的ARCITON-Phonon在半导体中的相互作用
5. Light-matter interactions in semiconductor nanowires: Light-effect transistor and light-induced changes in electron-phonon coupling and electrical characteristics. [D] . Marmon, Jason Kendrick. 2016

机译：半导体纳米线中的光-物质相互作用：光效应晶体管以及电子-声子耦合和电特性的光诱导变化。
6. Nonadiabatic exciton-phonon coupling in Raman spectroscopy of layered materials [O] . Sven Reichardt, Ludger Wirtz 2020

机译：层状材料拉曼光谱中的非抗体激子 - 声子耦合
7. Exciton Transitions and Exciton-Phonon Interaction in Microcrystallites of Layered Semiconductors [O] . 金大貴 1997

机译：层状半导体微晶中的激子跃迁和激子 - 声子相互作用

Exciton-Phonon interaction in semiconductors with intermediate polar coupling

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