Dual-wavelength pump-probe measurements on helium-plasma-grown InGaAsP reveal complex carrier dynamics

摘要

Semiconductor materials having picosecond carrier lifetimes are extremely attractive for use in >100 Gbit/s all-optical switching/gating devices. Passive switching devices made of these materials can be compact (sub-millimeter), better suited for monolithic integration, and have multiple ports with add/ drop capabilities.