首页> 外文会议>NATO advanced research workshop on fundamental aspects of ultrathin dielectrics on si-based devices : Towards an atomic scale understanding >THE CURRENT STATUS AND FUTURE TRENDS OF SEMOX/SOI, NEW TECHNOLOGICAL APPLICATIONS OF THE SIC/SOI SYSTEM
【24h】

THE CURRENT STATUS AND FUTURE TRENDS OF SEMOX/SOI, NEW TECHNOLOGICAL APPLICATIONS OF THE SIC/SOI SYSTEM

机译:SEMOX / SOI的当前状态和未来趋势,SIC / SOI系统的新技术应用

获取原文

摘要

The state of the art of the Silicon On Insulator (SOI) technology is presented The significant difference in the formation of thermally grown oxide and the buried oxide (BOX) produced by high dose oxygen implantation in silicon (SIMOX) will be highlighted. The different sources of the defects in the Si-overlayer and the SiO_2 buried layer produced during implantation and annealing treatment including Si-islands formation and strained Si-Si bonds in the BOX are discussed. A comparative study of the two most successful technologies SIMOX and wafer bonding is included. The feasibility to extend the SOI structures in the SiC is shown.
机译:在绝缘体(SOI)技术上的硅技术的状态被突出地介绍了通过高剂量氧气植入(SIMOX)产生的热生长氧化物和掩埋氧化物(盒)的显着差异。讨论了在植入和退火处理期间产生的Si-覆盖物和SiO_2掩埋层中的缺陷的不同来源,包括盒子中的Si-illss形成和紧张的Si-Si键。包括两个最成功的技术SIMOX和晶片键合的比较研究。示出了在SiC中扩展SOI结构的可行性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号