The electron emission switching property of the multilayer structures, which constitute of nitrogen doped tetrahedral amorphous carbon (n~+-ta-C) film and intrinsic ta-C layer fabricated by the filtered cathodic vacuum arc (FCVA) technique has been investigated. Low voltage DC bias (9V) was applied between the top and bottom layers in conjunction witht he conventional electric field applied between the cathode and anode. It has been demonstrated that by varying the low DC bias polarity, the on-set electric field for the electron emission can be varied by approx +-6 V/ mu m compared to the unbiased situation. A possible mechanism for the multilayer field emission and the switching property is proposed.
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机译：已经研究了多层结构的电子发射切换性，其构成由过滤的阴极真空弧（FCVA）技术制造的氮掺杂四面型无定形碳（N〜+ -TA-C）膜和固有的TA-C层。在与在阴极和阳极之间施加的常规电场结合在顶部和底层之间施加低压DC偏压（9V）。已经证明，通过改变低DC偏置极性，与无偏见的情况相比，电子发射的内置电场可以通过大约±6 v / mu m而变化。提出了多层场发射和开关特性的可能机制。
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