In this paper, we report on a substantial lowering of the threshold field for electron field emission from Si field emitter arrays (FEA), which have been coated with a thin layer of nanocrystalline diamond by microwave plasma-assisted chemical vapor deposition (MPCVD) from fullerene (C_(60)) and methane (CH_4) precursors. The field emission characteristics were investigated and the emission sites imaged using photoelectron emission microscopy (PEEM). Electron emission from these Si FEAs coated with nanocrystalline diamond was observed at threshold fields as low as 3 V/ mu m, with effective work functions as low as 0.59 eV.
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机译：在本文中，我们报告了Si场发射极阵列（FEA）的电子场发射阈值场的大大降低，通过微波等离子体辅助化学气相沉积（MPCVD）涂覆有薄层纳米晶金刚石的薄层富勒烯（C_（60））和甲烷（CH_4）前体。研究了场发射特性，并使用光电子发射显微镜（PEEM）成像的发射位点。在低至3V / mu m的阈值场观察到涂有纳米晶金刚石的这些Si Feas的电子发射，具有低至0.59eV的有效功函数。
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