Global model of oxygen transport in the melt and inert gas is proposed which is based on coupled two-dimensional stationary modeling of global heat transfer, Laminar flow of inert gas and turbulent flow in Si melt, and transport of dissolved oxygen in the melt and SiO vapor in the gas. The model allows to study effects of process parameters like flow rate and pressure of inert gas, and rotation of the crucible on incorporation of oxygen into Si crystal.
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