Investigations of oxidation dependence on type of porous silicon near room temperature by isothermal microcalorimeter

摘要

Oxidation of porous silicon has been studied using thermal activity monitoring, i.e.isothermal microcalorimeter. it was found that, at room temperature (25 deg C) the micro-calorimetric signal from the oxidation of the p~+-ptype porous silicon (PS) preduces exponentially, while in the cae of n-type PS, the signal starts to increase slowly, reaching its highest value after some hours. This kind of behaviour is typical of sutocatalytic reactions. To clarify the origin of the difference, we varied the preparation parameters of the porous silicon. We determined the activation energy from the measurements near the room temperature (25-70 deg C). The results of this research have been compared with the previous observations and the pssible origin of the difference has been discussed.