Preparing a GaMnN film by ECR-PRMOCVD for solar cell

摘要

Diluted magnetic semiconductor film (Ga,Mn)N was grown on quartz substrate by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The crystal structure and surface topography of (Ga,Mn)N films were characterized by reflection high-energy electron diffraction (RHEED), x-ray diffraction (XRD) and atomic force microscope (AFM). (Ga,Mn)N films exhibit a preferred orientation and retained a good wurtzite structure, and no second phase was detected. The surface topography of the (Ga,Mn)N film is composed of many submicron grains piled in the consistent orientation. Two Mn-related levels were detected by PL spectrum, and the binding energy of Mn accepter level is 433 meV.